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| FDC6310P April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features * -2.2 A, -20 V. RDS(ON) = 125 m @ V GS = -4.5 V RDS(ON) = 190 m @ V GS = -2.5 V * Low gate charge * Fast switching speed * High performance trench technology for extremely low RDS(ON) * SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick) Applications * Load switch * Battery protection * Power management D2 S1 D1 4 5 G2 S2 G1 TA=25oC unless otherwise noted 3 2 1 SuperSOT TM 6 -6 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -20 12 (Note 1a) Units V V A W -2.2 -6 0.96 0.9 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 C/W C/W Package Marking and Ordering Information Device Marking .310 (c)2001 Fairchild Semiconductor Corporation Device FDC6310P Reel Size 7'' Tape width 8mm Quantity 3000 units FDC6310P Rev C(W) FDC6310P Electrical Characteristics Symbol BV DSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C V DS = -16 V, V GS = 0 V V GS = 12 V, V DS = 0 V V GS = -12 V, V DS = 0 V V DS = V GS , ID = -250 A ID = -250 A, Referenced to 25C V GS = -4.5 V, ID = -2.2 A V GS = -2.5 V, ID = -1.8 A V GS =-4.5 V, ID =-2.2 A, TJ =125C V GS = -4.5 V, V DS = -5 V, V DS = -5 V ID = -3.5 A Min -20 Typ Max Units V -11 -1 100 -100 mV/C A nA nA Off Characteristics On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance -0.6 -1.0 3 100 145 137 -1.5 V mV/C 125 190 184 m ID(on) gFS -6 6 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = -10 V, f = 1.0 MHz V GS = 0 V, 337 88 51 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = -10 V, V GS = -4.5 V, ID = -1 A, RGEN = 6 9 12 10 5 18 22 20 10 5.2 ns ns ns ns nC nC nC V DS = -10 V, V GS = -4.5 V ID = -2.2 A, 3.7 0.65 1.3 Drain-Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage V GS = 0 V, IS = -0.8 A (Note 2) -0.8 0.77 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 130 C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140/W when mounted on a .004 in2 pad of 2 oz copper c) 180/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDC6310P Rev C(W) FDC6310P Typical Characteristics 6 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE V GS =- 4.5V 5 -I D, DRAIN CURRENT (A) -3.5V 4 -3.0V -2.5V 2.75 2.5 2.25 2 1.75 1.5 1.25 1 0.75 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6 -ID , DRAIN CURRENT (A) -2.5V -3.0V -3.5V -4.5V V GS = -2.0V 3 -2.0V 2 -1.8V 1 0 -V DS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 1.6 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE ID = -2.2A VGS = -4.5V 1.4 ID = -2.2 A RDS(ON) ON-RESISTANCE (OHM) , 0.35 0.3 0.25 0.2 TA = 125o C 0.15 0.1 T A = 25o C 0.05 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( oC) Figure 3. On-Resistance Variation with Temperature. 5 -IS, REVERSE DRAIN CURRENT (A) V DS = -5V 4 -ID, DRAIN CURRENT (A) TA = -55o C 125o C 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 10 1 0.1 T A = 125o C 25oC -55o C 3 2 0.01 0.001 0.0001 1 0 0.5 1 1.5 2 2.5 3 -V GS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6310P Rev C(W) FDC6310P Typical Characteristics 5 -V GS, GATE-SOURCE VOLTAGE (V) ID = -2.2A 4 V DS =- 5V 600 -10V 500 CAPACITANCE (pF) -15V f = 1MHz V GS = 0 V 400 C ISS 300 200 COSS 100 CRSS 3 2 1 0 0 1 2 3 4 5 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 5 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 4 RDS(ON) LIMIT 100ms 10ms SINGLE PULSE R JA = 180C/W T A = 25C 3 1 10s DC 1s 2 0.1 V GS = -4.5V SINGLE PULSE RJA = 180o C/W TA = 25o C 1 0.01 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 180C/W 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDC6310P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2 |
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